The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li

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Material type: Text

TextLanguage: English Series: Semiconductor measurement technologyPublication details: Washington : United States Government Printing Office, 1979Description: vi, 42 p. : graphs ; 26 cmSubject(s):

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Holdings
Item type	Current library	Collection	Call number	Materials specified	Status	Date due	Barcode	Item holds
Books	National Library of India	US	U.S 537.622 L 613 t (Browse shelf(Opens below))		Available		ADX000126518ENG

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This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation

Includes bibliographical references and index.

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