The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / (Record no. 596261)

MARC details
000 -LEADER
fixed length control field 01397namaa2200349 a 4500
001 - CONTROL NUMBER
control field vtls001303844
003 - CONTROL NUMBER IDENTIFIER
control field NLI
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20210627043907.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 120418s1979 dcu b f001 0 eng
039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE]
-- 201204181930
-- VLOAD
040 0# - CATALOGING SOURCE
Original cataloging agency NLI
Transcribing agency VTLS-2012_FOD
Description conventions AACR2
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title eng
044 ## - COUNTRY OF PUBLISHING/PRODUCING ENTITY CODE
MARC country code dcu
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Li, Sheng S.,
Dates associated with a name 1938-
9 (RLIN) 725564
245 14 - TITLE STATEMENT
Title The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon /
Statement of responsibility, etc. Sheng S. Li
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Washington :
Name of publisher, distributor, etc. United States Government Printing Office,
Date of publication, distribution, etc. 1979
300 ## - PHYSICAL DESCRIPTION
Extent vi, 42 p. :
Other physical details graphs ;
Dimensions 26 cm.
440 #0 - SERIES STATEMENT/ADDED ENTRY--TITLE
Title Semiconductor measurement technology
9 (RLIN) 725565
490 1# - SERIES STATEMENT
Series statement NBS special publication ; 400-47
500 ## - GENERAL NOTE
General note This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Semiconductor doping
9 (RLIN) 725566
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Silicon
General subdivision Defects
9 (RLIN) 725567
710 1# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element United States.
Subordinate unit Defense Advanced Research Projects Agency
9 (RLIN) 725568
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element National Science Foundation (U.S.)
9 (RLIN) 689805
887 ## - NON-MARC INFORMATION FIELD
Content of non-MARC field
901 ## - LOCAL DATA ELEMENT A, LDA (RLIN)
a AD 126518
b 22.10.2010
902 ## - LOCAL DATA ELEMENT B, LDB (RLIN)
a U.S 537.622 L 613 t
949 ## - LOCAL PROCESSING INFORMATION (OCLC)
-- VIRTUAITEM
-- 10000
-- 100
6 ADX000126518ENG
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Books
Holdings
Withdrawn status Lost status Damaged status Not for loan Collection code Home library Current library Shelving location Date acquired Total Checkouts Full call number Barcode Date last seen Price effective from Koha item type
          National Library of India National Library of India       U.S 537.622 L 613 t ADX000126518ENG 27/06/2021 27/06/2021 Books
                                                                           
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