| 000 | 01397namaa2200349 a 4500 | ||
|---|---|---|---|
| 001 | vtls001303844 | ||
| 003 | NLI | ||
| 005 | 20210627043907.0 | ||
| 008 | 120418s1979 dcu b f001 0 eng | ||
| 039 | 9 |
_y201204181930 _zVLOAD |
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| 040 | 0 |
_aNLI _cVTLS-2012_FOD _eAACR2 |
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| 041 | 0 | _aeng | |
| 044 | _adcu | ||
| 082 | 0 | 4 | _a537.622 |
| 100 | 1 |
_aLi, Sheng S., _d1938- _9725564 |
|
| 245 | 1 | 4 |
_aThe theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / _cSheng S. Li |
| 260 |
_aWashington : _bUnited States Government Printing Office, _c1979 |
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| 300 |
_avi, 42 p. : _bgraphs ; _c26 cm. |
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| 440 | 0 |
_aSemiconductor measurement technology _9725565 |
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| 490 | 1 | _aNBS special publication ; 400-47 | |
| 500 | _aThis activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 |
_aSemiconductor doping _9725566 |
|
| 650 | 0 |
_aSilicon _xDefects _9725567 |
|
| 710 | 1 |
_aUnited States. _bDefense Advanced Research Projects Agency _9725568 |
|
| 710 | 2 |
_aNational Science Foundation (U.S.) _9689805 |
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| 887 | _a | ||
| 901 |
_aAD 126518 _b22.10.2010 |
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| 902 | _aU.S 537.622 L 613 t | ||
| 949 |
_AVIRTUAITEM _D10000 _X100 _6ADX000126518ENG |
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| 942 |
_2ddc _cBKS |
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| 999 |
_aVIRTUA40 _c596261 _d596261 |
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