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Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication / D.R. Myers ; sponsored by Division of Electric Energy Systems, Department of Energy by Series: National Bureau of Standards Special publication ; 400-60 | Semiconductor measurement technology
Material type: Text Text; Format: print ; Literary form: Not fiction
Language: English
Publication details: Washington, D. C. : Unied States Department of Commerce, National Bureau of Standards, 1980
Availability: Items available for loan: National Library of India (1)Call number: U.S 621.3815 M 992.

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2.
No cover image available
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication / D.R. Myers ; sponsored by Division of Electric Energy Systems, Department of Energy by Series: National Bureau of Standards Special publication ; 400-60 | Semiconductor measurement technology
Material type: Text Text; Format: print ; Literary form: Not fiction
Language: English
Publication details: Washington, D. C. : Unied States Department of Commerce, National Bureau of Standards, 1980
Availability: Items available for loan: National Library of India (1)Call number: U.S 621.3815 M 992.

Place hold Request article Save to lists
                                                                           
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