TY  - BOOK
AU  - Li,Sheng S.
ED  - United States.
ED  - National Science Foundation (U.S.)
TI  - The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
T2  - NBS special publication ; 400-47
U1  - 537.622 
PY  - 1979///
CY  - Washington
PB  - United States Government Printing Office
KW  - Semiconductor doping
KW  - Silicon
KW  - Defects
N1  - This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation; Includes bibliographical references and index
ER  -