Li, Sheng S.,  1938- <br/><br/>
The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / 
Sheng S. Li 
 - Washington :  United States Government Printing Office,  1979 
 - vi, 42 p. :  graphs ;  26 cm. 
 - Semiconductor measurement technology .
 - NBS special publication ; 400-47 .
<br/><br/> This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation 
<br/><br/>Includes bibliographical references and index. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Semiconductor doping<br/>Silicon--Defects
<br/><br/><label>Dewey Class. No.: </label>537.622